منابع مشابه
GaN and InN nanowires grown by MBE: a comparison
Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. F...
متن کاملStructural and transport properties of InN grown on GaN by MBE
In this work, the growth of InN on GaN substrates by molecular beam epitaxy and the structural and electrical characterization are presented. The quality of InN is found to be a sensitive function of the III/V flux ratio and the substrate temperature. The structural quality of InN is characterized by X-ray diffraction, and the transport property is characterized by Hall effect measurements. An ...
متن کاملHigh-quality InN films on GaN using graded InGaN buffers by MBE
The growth of high-quality thick InN films is challenging because of the lack of native substrates. In this work, we demonstrate the use of a linearly graded InGaN buffer layer for the growth of InN films on GaN substrates. A 500nm InN film with <0.1 nm RMS roughness is obtained with a peak mobility of 1410 cm2/(V&s) at 300K. A strong room temperature photoluminescence showing a bandgap of 0.65...
متن کاملExploring the Growth Mechanisms of GaAs Nanowires Grown by MBE
We have successfully grown GaAs nanowires by Molecular Beam Epitaxy. In this work, we investigate the principal growth mechanisms underlying nanowire growth by measuring the morphology of the nanowires and comparing them to a simple growth model. From this, we are able to make several conclusions. The results of the data show that Adatom Diffusion contributes more to the overall growth rate tha...
متن کاملFractal terraces in MBE growth
MBE growth on high symmetry surfaces depends to some extent on the shape of the terraces which form the embryos of each new atomic layer. The conditions for formation of compact or fractal terraces are discussed in two limits: large terraces, to which a continuous description applies, and small terraces, which require that the discrete nature of matter be taken into account. In both cases it is...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 2000
ISSN: 1092-5783
DOI: 10.1557/s1092578300004257